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!" # $ % & ' ( % ) * +' #', - " . $ /0 $ 1& $ /0 $ 1& % 2& . 3 4 & + 4 &5 6 7 8"7 " 8 "9 6 9 / :5 7 /7 " ;6< 8 " =<9 IRG4BC20FPBF fast speed igbt insulated gate bipolar transistor pd - 95742 e c g n-channel features !" #$ % &'%() * + , % - ',)!!".( / % &'%() ,* 0+0 '%() 0 1 + 2 2 0 *0 ,% -'3'%() = 45 65' 67$". + . >>> " + 45 ?5 ) 46 " >>> @a + . #;5 -& >>> b a a, " 8"c9 >>> 8d9 a to-220ab b@7@% www.irf.com 1 2 www.irf.com e e 5 f# bee 5 "# ? ? & 66" 6 e "c e @ 5 "# e " " !"# 4 e " e # 4 ?"5 e "c e !"# 5 ) ,, 7" e " 5 f# ? @ ? & 66" 6 ,, e e @ 5 f# ? "! " e 4 = 5 !"# e e 5 e e " 5 5 e e 5 5 ) ( e e * # * g ) , 8 9 e c % !"# g ) , 8 9 e %" " % 4 ?" b g ) , 8 9 e !"! 2 1- e % e + e c e 266 1- e ! b !"#5 %b ? e 7 5 + ? 2 4, ( e "c e - hh 266 4, ( e " e . 4 ?" !5 5 % 4, ( e "c " 2 1- e % e 5 + e c e !"#5 %b 266 1- e 7 e 5 + ? ? e 7% e - hh 4, ( e "7 e . 4 ?" 5 % ( e c" e i / 6 & & & e % e 2& & e 7c e &? 7 4 ?" c +' 6 & e c" e j "/id !"# k ) f# $ !"# $ , bfl - 6 " m" $ , "f5 ," +&' l 5 & , ;- 0" n &" 8 4 6" 7; 9 bm8 95 5 ( fi5 + ? 5 84 6" 79 +&' l & , ;- 0 n &" www.irf.com 3 /8 6' 0# 1 10 100 1 10 v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c v = 15v 20s pulse width ge t = 25 c j o t = 150 c j o 1 10 100 5 6 7 8 9 10 11 12 13 14 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5s pulse width cc t = 25 c j o t = 150 c j o 0 5 1 0 1 5 2 0 2 5 0.1 1 10 10 0 f, frequency (khz) a 60% of rated voltage i ideal diodes square wave: for both: duty cycle: 50% t = 125c t = 90c gate drive as specified sink j triangular wave: i clamp voltage: 80% of rated power dissipation = 13w /8 .# 4 www.irf.com ! " # ! -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 4.5 c i = a 9 c i = a 18 c 25 50 75 100 125 150 0 4 8 12 16 t , case temperature ( c) maximum dc collector current(a) c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 0.50 single pulse (thermal response) www.irf.com 5 " # $ # $" # %&# $ ' %&# ! 0 5 10 15 20 25 30 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 9.0a cc c 0 10 20 30 40 50 0.66 0.67 0.68 0.70 0.71 0.72 r , gate resistance (ohm) total switching losses (mj) g v = 480v v = 15v t = 25 c i = 9.0a cc ge j c -60 -40 -20 0 20 40 60 80 100 120 140 160 0.1 1 10 t , junction temperature ( c ) total switching losses (mj) j r = 50ohm v = 15v v = 480v g ge cc i = a 18 c i = a 9 c i = a 4.5 c ? ? 1 10 100 0 200 400 600 800 1000 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies ge gc , ce res gc oes ce gc c ies c oes c res 6 www.irf.com %&# %( 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i , collector-to-emitter current (a) total switching losses (mj) c r = 50ohm t = 150 c v = 480v v = 15v g j cc ge ? 1 10 100 1 10 100 100 0 v = 20v t = 125 c ge j o v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c safe operating area www.irf.com 7 d.u.t. 50v l v * c * driver same type as d.u.t.; vc = 80% of vce(max) * note: due to the 50v power supply, pulse width and inductor will increase to obtain rated id. 1000v 80 ' * /) 8 90 800 8 ) 8 480f 960v t=5 s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% v c i c e on e off ts on off e = (e +e ) : / ;* 5 0v driver* 1000v d.u.t . i c c v l : / ) 8 8 www.irf.com lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. hexfet 1- gate 2- drain 3- source 4- drain lead assignments igbts, copac k 1- gate 2- collector 3- emitter 4- collector dimensions are shown in millimeters (inches) example: in the assembly line "c" t his is an irf1010 lot code 1789 as s e mb le d on ww 19, 1997 part numbe r assembly lot code dat e code year 7 = 1997 line c week 19 logo rect ifier int e rnat ional note: "p" in assembly line position indicates "lead-free" data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/04 note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ |
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